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| Power Transistors 2SD2266 Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q 13.00.2 4.20.2 5.00.1 10.00.2 1.0 q 2.50.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25C) Ratings 80 60 7 8 4 1 15 2 150 -55 to +150 Unit V V V A A A W C C 90 1.20.1 18.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 4A VCE = 4V, IC = 4A IC = 4A, IB = 0.4A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = - 0.4A, VCC = 50V 80 0.3 1.0 0.2 60 70 20 2.0 1.5 V V MHz s s s 320 min typ max 100 100 Unit A A V FE1 Rank classification Q 70 to 150 P 120 to 250 O 160 to 320 Rank hFE1 1 Power Transistors PC -- Ta 20 4 (1) TC=Ta (2) Without heat sink (PC=2.0W) IB=40mA TC=25C 35mA 5 TC=-25C 2SD2266 IC -- VCE 6 VCE=4V 25C 100C IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) 3 30mA 25mA 20mA Collector current IC (A) 8 4 10 2 15mA 10mA 3 2 5 (2) 1 5mA 1 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.01 0.03 -25C TC=100C 104 hFE -- IC 1000 VCE=4V fT -- IC VCE=12V f=10MHz TC=25C 100 Forward current transfer ratio hFE 103 TC=100C 102 25C -25C Transition frequency fT (MHz) 3 10 10 10 1 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 1 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C ICP IC 3 DC 1 0.3 0.1 0.03 t=1ms Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) Collector current IC (A) 8 1000 10 10 tstg 1 ton 0.1 tf 100 10 1 1 3 10 30 100 300 1000 0.01 0 1 2 3 4 5 6 7 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 1000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 100 (1) (2) 10 2SD2266 Thermal resistance Rth(t) (C/W) 1 0.1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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